Renesas Electronics RJH65T46DPQ-A0#T0 IGBT, 80 A 650 V, 3-Pin TO-247A

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COO (Country of Origin): CN
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IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
屬性
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 340.9 W
Package Type TO-247A
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.94mm
Width 5.02mm
Height 21.13mm
Dimensions 15.94 x 5.02 x 21.13mm
Maximum Operating Temperature +175 °C
Gate Capacitance 3000pF
6 在6 工作日內發貨 (海外庫存)
4 在4 工作日內發貨 (海外庫存)
單價(不含稅) /個 (每包:2個)
TWD 132
(不含稅)
TWD 139
(含稅)
單位
Per unit
Per Pack*
2 - 18
TWD132
TWD264
20 - 38
TWD119
TWD238
40 - 198
TWD108
TWD216
200 - 398
TWD99
TWD198
400 +
TWD92
TWD183
* 參考價格
包裝方式: