Renesas Electronics RJH65D27BDPQ-A0#T2 IGBT, 100 A 650 V, 3-Pin TO-247A

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COO (Country of Origin): CN
產品詳細資訊

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
屬性
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 375 W
Package Type TO-247A
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.94mm
Width 5.02mm
Height 21.13mm
Dimensions 15.94 x 5.02 x 21.13mm
Maximum Operating Temperature +175 °C
Gate Capacitance 2850pF
6 現貨庫存,可於4工作日發貨。
單價(不含稅) 個
TWD 186
(不含稅)
TWD 195
(含稅)
單位
Per unit
1 - 4
TWD186
5 - 9
TWD167
10 - 49
TWD152
50 - 99
TWD139
100 +
TWD129
包裝方式: