- RS庫存編號:
- 145-8845
- 製造零件編號:
- BFP640ESDH6327XTSA1
- 製造商:
- Infineon
此產品已停售
- RS庫存編號:
- 145-8845
- 製造零件編號:
- BFP640ESDH6327XTSA1
- 製造商:
- Infineon
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineons silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Bipolar Transistors, Infineon
規格
屬性 | 值 |
---|---|
Transistor Type | NPN |
Maximum DC Collector Current | 50 mA |
Maximum Collector Emitter Voltage | 4.1 V |
Package Type | SOT-343 |
Mounting Type | Surface Mount |
Maximum Power Dissipation | 200 mW |
Transistor Configuration | Single |
Maximum Collector Base Voltage | 4.8 V |
Maximum Emitter Base Voltage | 0.5 V |
Maximum Operating Frequency | 45 GHz |
Pin Count | 4 |
Number of Elements per Chip | 1 |
Dimensions | 2 x 1.25 x 0.9mm |
Maximum Operating Temperature | +150 °C |